A field-enhanced generation model for field emission from p-type silicon

Field penetration into p-type silicon emitter creates a depletion region and causes the field emission current to he limited by the supply of electrons in the presence of a high electric field. A model is presented that takes field-enhanced generation within the depletion region into account, which may explain the nonlinear phenomenon in Fowler-Nordheim (F-N) plots of p-type silicon.