Influence of the MOVPE growth parameters on the properties of InGaAsN/GaAs MQW structures for solar cells application

This work presents the epitaxial growth of undoped multiple quantum well (MQW) - 3 × In
_y
Ga
_1-y
As
_1-x
N
_x
/GaAs - structures obtained by atmospheric pressure metalorganic vapour phase epitaxy (APMOVPE). The relations between the hydrogen flow rate through the bubblers with TBHy, TMGa, TMIn and the composition of the resulting In
_y
Ga
_1-y
As
_1-x
N
_x
films were investigated. The influence of the growth temperature on the quantum well In
_y
Ga
_1-y
As
_1-x
N
_x
parameters were observed. Based upon this experiment, the technology parameters were estimated. These results were applied to the optimization of the hydrogen flow rate through the bubblers with TBHy, TMGa, TMIn and temperature for the growth of quantum well of In
_y
Ga
_1-y
As
_1-x
N
_x
.