Deep levels in InGaAsN/GaAs and InGaAs/GaAs heterojunctions

This paper highlights the deep level transient spectroscopy investigation of the triple quantum well InGaAsN/GaAs and InGaAs/GaAs heterostructures grown by atmospheric pressure metal organic vapour phase epitaxy (APMOVPE). The main differences of these typical triple quantum well structures are: nitrogen concentration in In
y
Ga
1−y
As/GaAs heterostructures, thickness of UD In
y
Ga
1−y
As
1−x
N
x
quantum wells, indium concentration and thickness of UD GaAs barrier. The three electron deep levels ET1 (0.472 eV), ET2 (0.974 eV) and ET3 (0.572 eV) were identified. The 0.36 % presence of nitrogen in structure NI51n inhibits defect ET1 and creates the trap ET2 with very high trap concentration.