Devices with Te-doped InGaP layers

Highly n-type doped and several nanometres thick layers are necessary for various device structures, especially HEMTs. We studied delta doping In
_1-X
Ga
_X
P ternary with tellurium, the layers were grown by MOVPE. A low growth temperature of 560 °C was used to restrict the influence of diffusion, and diethyltellurium was used as the precursor. A maximum Hall sheet concentration of 2.75×10
¹³
cm
^-2
was achieved. Very thin HEMT structures with high conductivity and HEMTs were prepared using the In
_1-X
Ga
_X
P barriers doped with tellurium.