Influence of post deposition annealing temperatures on electrical properties of Al2O3/InSb MOSCAPs

The influence of post deposition annealing (PDA) temperatures on electrical characteristics of Al
₂
O
₃
/InSb metal-oxide-semiconductor capacitor (MOSCAP) structures is investigated. Low frequency C-V responses with strong inversion behavior in the whole range of measured frequency (100 Hz-1 MHz) are observed, indicating very short minority carrier response time in InSb. The PDA temperature of 300°C and above would result in the reduction of maximum capacitance. At the PDA temperature of above 300°C the C-V hysteresis, frequency dispersion and stretch out increases significantly, indicating the degradation of the MOSCAP structures. The degradation might relate to the interdiffusion between Al
₂
O
₃
and InSb during thermal steps.