Thermoelectric properties and devices of p-type Bi0.4Sb1.6Se2.4Te0.6 and n-type Bi2Se0.6Te2.4 prepared by solid state microwave synthesis

This study reports on the fabrication of a chalcogen-based thermoelectric power generation (TEG) device using p-type Bi
_0.4
Sb
_1.6
Se
_2.4
Te
_0.6
and n-type Bi
₂
Se
_0.6
Te
_2.4
legs. Electrical power generation characteristics were monitored by changing both the temperature conditions and the number of p-n couples required to generate maximum power. The significance of the resistances, including the internal resistance (R
_in
) and contact resistance (R
_c
) between legs and electrodes, are discussed. The maximum open circuit voltage (V
_oc
) and output power (P
_max
) obtained with the 18 p-n couples device were 1480.5 mV and 273.2 mW, respectively, under the thermal condition of T
_H
=523 K hot-side temperature and ΔT = 184 K temperature difference.