The growth and fabrication of high-performance In0.5Ga0.5As metal-oxide-semiconductor capacitor on GaAs substrate by metalorganic chemical vapor deposition method

Growth conditions have investigated for growing high quality In
_0.3
Ga
_0.7
As and In
_0.5
Ga
_0.5
As on GaAs substrate by metalorganic chemical vapor deposition method. Annihilation reactions between threading dislocations observed by transmission electron microscopy are experimental evidences to confirm threading dislocations had been blocked in In
_x
Ga
_1-x
As buffer layers. A high quality smooth surface In
_0.5
Ga
_0.5
As epi-film with threading dislocation density of 2×10
⁶
cm
^-2
was achieved at growth temperature of 490
^o
C. Metal-oxide-semiconductor capacitor devices fabricated on In
_0.5
Ga
_0.5
As/GaAs perform nice capacitance-voltage response, with small frequency dispersion. The conductance contours indicate that the Fermi level moves freely to the lower part of the InGaAs bandgap without pinning.