3D monolithic integrated thermoelectric IR sensor

In this paper, we demonstrate a 3D monolithic integrated thermoelectric IR sensor by using CMOS-MEMS technology. Since CMOS technology is a plane process, wafer-level packaging is used to further improve the system integration density. Both the circuit interface and IR filter are integrated in the thermoelectric IR sensor. In the vertical direction, IR filter is integrated with IR sensor to miniaturize the IR system by wafer-level Au-Si bonding, as well as improve sensor performance by the vacuum bonding. In the plane direction, the thermopile microstructure was fabricated by standard CMOS process and released by XeF2 Post-CMOS technology. Thus, the sensor merges benefits of CMOS technology with the advantage of on chip signal processing.