Design of GaN and SiC 5–20kV vertical superjunction structures

We report on the design, simulations and optimization of 5-20kV GaN and SiC vertical superjunction structures. The space charge in the GaN and SiC superjunction pillars have been optimized using superjunction p-n diode, and the best trade-off between breakdown voltage (BV) and specific on-resistance (R
_{on, sp}
) have been obtained by varying the pillar dosage, length and width.