Metal-organic vapor-phase epitaxy growth of InP-based HEMT structures with InGaAs/InAs composite channel

This paper reports the metal-organic vapor-phase epitaxy (MOVPE) growth of InP-based high electron mobility transistor (HEMT) structures with an InGaAs/InAs composite channel (CC). By optimizing the low-temperature growth conditions of the InGaAs/InAs CC, we obtained high-quality epiwafers with high electron mobility and a high-selectivity InP recess-etching-stopper layer. The mobilities exceed 18,000 cm
²
/Vs, which is comparable to the highest mobility ever reported for InP-based HEMT structures grown by molecular beam epitaxy (MBE). To our knowledge, this is the first report of MOVPE growth of InP-based HEMTs with an InGaAs/InAs CC.