Novel atomic layer deposited thin film beryllium oxide for InGaAs MOS Devices

Metal-oxide-semiconductor (MOS) capacitors and field-effect-transistors (FET) with atomic layer deposited (ALD) BeO and Al
2
O
3
dielectric layers on InGaAs substrate were fabricated for electrical characterization and device performance comparison. Physical characterization of BeO grown film on Si and InGaAs substrates were done using TEM, AFM, and XPS. BeO devices show decent C-V results, lower dielectric leakage current and interface defect density. High thermal stability, large energy band-gap and strong diffusion barrier properties of BeO along with ALD self-cleaning effects on the interface makes it an excellent candidate for a dielectric or interface passivation layer for InGaAs MOS devices.