Coupled electro-thermal model for simulation of GaN power switching HEMTs in circuit simulators

In this paper we will present an electrical equivalent electro-thermal model for simulating GaN-on-Si high electron mobility transistors (HEMTs) in circuit simulators. The extraction procedure for the thermal subcircuit will be shown, which is based on finite element modeling. The model will be verified by electrical measurements and micro-Raman measurements.