Characterisation of InP/InGaAs heterojunction bipolar transistor as an optoelectronic mixer

The modeled and characterization of heterojunction bipolar transistor optoelectronic mixer (HBT OEM) has been demonstrated. The model takes into account the doping concentration and dimension of HBT InP/InGaAs. This device shown to have potential in photodetecting and performing frequency up-conversion which is optoelectronic mixer for millimeter wave radio over fiber application.