Parallel fluid modeling of a dome-shape inductively coupled plasma reactor with fluorocarbon precusor

Summary form only given. A parallel 2D axisymmetric fluid model for simulating fluorocarbon (CF
4
) gas discharge in a dome-shaped inductively couple plasma source (ICPs) used for etching SiO
2
under pressure of 20 mTorr is reported. Etching of SiO
2
is an important fabrication process in semiconductor industry. Thus, etching rate and selectivity of SiO
2
over Si are of extreme importance during etching. In our models, a set of fluid modeling equations coupled with Maxwell's equation and surface model are solved self-consistently by using finite-difference method. At each time step, the resulting large sparse algebraic nonlinear system is solved by the combination of preconditioning and Krylov subspace method (KSP)
¹
. All equations are parallelized completely using domain decomposition method. A complex plasma chemistry is employed, which includes 32 species, 92 gas reactions and 27 surface reactions.