Asymmetric tunneling metal-insulator-metal diode for high frequency application

To rectify high frequency AC bias, the characteristics and the structure of asymmetric tunneling metal-insulator-metal (MIM) diode has been studied. Needle like nanometer level electrode structure makes a high probability of electron tunneling due to high electrical field density on the electrode structure. The result enhances the asymmetric characteristic of current-voltage at negative to positive bias sweep, which induces a low leakage current level and a high rectifying efficiency.