Forming Kinetics in $\hbox{HfO}_{2}$ -Based RRAM Cells

In this paper, key aspects of the electroforming in resistive-RAM cells with HfO
₂
are addressed. Specifically, transient measurements were performed on extremely short timescales to characterize systematically the forming time as a function of the voltage pulse amplitude, temperature, electrode materials, and device area. An analytical model was developed, accounting for the investigated experimental parameters. Impact of the forming (and SET) waveform on read disturb is also investigated.