Contact-Length-Dependent Contact Resistance of Top-Gate Staggered Organic Thin-Film Transistors

In this letter, a contact-length-dependent contact resistance model for top-gate staggered organic thin-film transistors (OTFTs) is proposed. The presented model can well describe the contact resistance increase as the distance by which the gate electrode overlaps the source and drain contact (contact length) decrease. Based on the contact resistance model, the contact-length-dependent cutoff frequency of OTFTs is described, and an optimized contact length can be obtained for high-frequency OTFT applications.