Analytical short-channel effect model for ultra-thin SOI MOSFETs including floating body effects

Summary form only given. SOI MOSFETs implemented on ultra-thin superficial Si film are regarded as promising candidates for the deep-half micron CMOS generation due to their excellent characteristics. To assess the transistor and technology design, however, a compact analytical model that includes the important floating body effects is needed. In this work, a physics-based analytical model for the threshold voltage Vth, that considers (i) a more general non-uniform channel profile and (ii) also the floating body effects, and parasitic bipolar action, that greatly degrade DIBL, is presented. Threshold lowering in the saturation regime is important since it determines Ioff leakage and standby current. These effects have not been included in previous models, and therefore are limited in their predictions.