High-power InAlGaAs-GaAs laser diode emitting near 731 nm

High-power, reliable operation of an InAlGaAs-based QW laser diode structure emitting near 731 nm and having a strained InAlGaAs active region is described. Threshold currents for coated 100 μm×1000 μm devices are 281 mA, and a peak power conversion efficiency of 41% is measured. Internal losses are measured to be 1.2 cm/sup -1/. A system for fiber-coupling two-dimensional continuous-wave (CW) arrays of these devices is demonstrated.