High temperature behaviour of GaN-on-Si high power MISHEMT devices

The device performance of GaN-on-Si AlGaN/GaN MISHEMT devices with a Si
₃
N
₄
/Al
₂
O
₃
bi-layer gate dielectric is studied as a function of temperature. In addition to the temperature dependence of the key DC parameters, which are also benchmarked against a silicon VDMOS device, special attention is paid to the behaviour under operating conditions, including thermal stability, switching behaviour and reliability.