Millimeter-Wave Power Sensor Based on Silicon Rod Waveguide

This paper presents a novel type of RF power sensor, based on a metallic structure integrated into an mm-wave range dielectric rod waveguide made of Si. The metallic structure is employed as a bolometer. Numerical simulations of temperature distribution are shown. A prototype was tested at frequencies of 45 GHz-1 THz and a power levels from 0.1 to 500 mW. The power sensor showed the sensitivity of 0.51 Ω/mW resistance change.