Influence Of The Device Geometry And Inhomogeneity On The Electrostatic Discharge Sensitivity Of InGaAs/InP Avalanche Photodetectors

An electrostatic discharge sensitivity study of four different types of InGaAsAnP avalanche photodiodes revealed that destruction occurred generally during negative pulse application at pulse amplitudes between 700V and 1400V. Photoluminescence and differential phase contrast imaging has been used for failure localization. A correlation between the location of the device breakdown and the active area inhomogeneity has been found for one type of avalanche photodiode.