An S-Band GaN on Si High Power Amplifier with 170W Output Power and 70% Drain Efficiency

A high power amplifier (HPA) with AlGaN/GaN HEMTs on Si substrate is presented. This HPA involves a pair of the HEMT-chips with a source field plate (SFP) and input matching networks on dielectric substrates, which are mounted in a metal package. With harmonic terminations at both the input and the output, output power (Pout) of 170 W, drain efficiency (DE) of 70%, and power added efficiency (PAE) of 63% have been obtained at 2.15 GHz. The authors believe that the DE be the highest value among ever-reported ones of GaN on Si HPAs.