A Non Linear Electrothermal Model of AlGaN/GaN HEMT for Switch Applications

This paper aims to depict a non linear and electrothermal model of AlGaN/GaN HEMT devices. This model was especially developed in order to operate in switch mode but it can also be used for amplifiers design. For this purpose, a particular attention has been brought on the formulation of the current source and the junction capacitances in order to extend the model validity all over the full I(V) characteristics (positive and negative drain voltage excursion). Compared to classical models dedicated to amplifier designs, this model is able to describe third quadrant (when driving the transistor with negative drain voltages) and zero drain voltage bias phenomena.