Impact of BiCMOS technology on SRAM circuit design

The BiCMOS design techniques used in the design of ECL (emitter-coupled logic) megabit and 256 K BiCMOS SRAMs are discussed. The topics covered include design issues with respect to ECL-to-CMOS-level translation, sense amplifier design, I/O interface issues, and the integration of bipolar devices into high-density, but traditionally CMOS-only circuits. The superior performance that BiCMOS has over CMOS with respect to temperature insensitivity is discussed.<>