Formation of straight-through pores in silicon substrates for 3-D metal interconnections

Silicon substrates with ordered pores, which go through the whole sample, have been fabricated for 3-D metal interconnections. The inter-pore distance can be ranged from 4 to 10 μm. The thickness of silicon substrate can reach up to 200-300 μm. The ordered porous structures are obtained by a photolithographic process.