The features of temperature dependence pc(T) in ohmic contacts to n-GaN (n-AlN) with high dislocation density

We studied temperature dependences of resistivity ρ
_c
(T) of Pd-Ti-Pd-Au ohmic contacts to wide-gap semiconductors n-GaN and n-AlN with high dislocation density. The obtained dependences cannot be explained by the existing mechanisms of current flow. We propose possible mechanisms explaining the experimental ρ
_c
(T) curves for ohmic contacts to n-GaN and n-Al N.