Simulation of electrical burnout of MOSFET structures

On the basis of two-dimensional numerical solution of drift-diffusion equations the avalanche injection current instability and filamentation are studied in planar and double diffusion MOSFET structures. It is demonstrated that the breakdown in these structures results in narrow (1/spl divide/10 /spl mu/m) isothermal filament formation during a short time (<1 ns). Filamentation time and filament dimension depend drastically on the current level through the p/sup +/-region. It is proved that high local overheating in the filament region is the cause of local electrical burnout of the MOSFET's.