Device Performance of Graphene Nanoribbon Field-Effect Transistors in the Presence of Line-Edge Roughness

The electrical characteristics of armchair edge graphene nanoribbon field-effect transistors in the presence of line-edge roughness scattering are studied. Self-consistent atomistic simulations based on the nonequilibrium Green's function formalism are employed. A tight binding model incorporating the third nearest neighbor interaction and edge bond relaxation is used to describe the electronic bandstructure. The effect of geometrical and roughness parameters on the on-current, the off -current, subthreshold swing, and the transconductance is investigated.