Influences of indium fluctuation to carrier transport and the current-voltage turn-on behavior in the InGaN quantum well LEDs

Most commercial c-plane InGaN quantum well (QW) LEDs show an early turn-on voltage, which is significantly lower than the value predicted by numerical simulation even with perfect contacts. To make a more realistic structure for simulations, nano-scale Indium fluctuations were included in the QWs. Simulations of current-voltage (I-V) characteristics using a 2D drift-diffusion solver showed much lower turn-on voltages than models with homogeneous layers and the calculated I-V agreed with experimental value, which may be due to the lateral fluctuations in the potential barrier due to indium fluctuation within the QWs.