Electrical characterization of 1D SnO2 nanowires

In this study, a method to identify the impedance of the sample composed of SnO
₂
nanowires (NWs) has been presented. The studied sensor structures were based on one-dimensional (1D) SnO
₂
NWs grown by thermal deposition on silicon substrate. The topography of SnO
₂
NWs was investigated by means of scanning electron microscopy (SEM). The results of qualitative and quantitative analysis in selected microregion have been presented. Furthermore, the electrical properties of the NWs were measured. The base of the measurement comprised impedance spectroscopy, Padé data approximation restrained by passivity condition. This study demonstrates that it is possible to separate the characteristic parameters for various transport phenomena in the NW.