Resistive switching characteristics of Ag2Se thin film

Electrical properties of silver selenide (Ag
₂
Se) thin film, which is a thickness of 500 nm, were studied using conducting atomic force microscopy (c-AFM). A resistive switching was observed in the sweep voltage range from -7 to +7 V at room temperature. In addition, the Ag/Ag
₂
Se/Au structure was compared with the Ag
₂
Se/Au structure. It was considered that the resistive switching behavior may cause Ag filaments. The typical resistive characteristics of the Ag
₂
Se thin film were presented, and the mechanism was discussed.