Field emission from nanoporous silicon carbide

A new type of cold cathode field emission electron source capable of emission at levels comparable to thermal sources is described. The emitter is a unique structure, comprised of a monolithic and rigid porous semiconductor nanostructure with homogenously distributed emission sites, and is fabricated through a room temperature process which allows for control of emission properties. These electron sources potentially enable breakthroughs in several critical technologies, including microwave electronics and x-ray imaging.