1.47 μm high characteristic temperature InGaAsP/InP MQW laser

LASTIP software was applied to simulate symmetric and asymmetric InGaAsP/InP multi-quantum-well (MQW) laser diodes (LDs) emitting at about 1.47 μm. In order to obtain the laser with high-temperature characteristic, the tunnel layer and inner cladding layer was inserted in the laser structure. By comparing the two structures, we found that the tunnel injection (TI) structure can effectively reduce hot carrier effects, the TI asymmetric SCH MQW lasers have good temperature characteristics and smaller threshold current.