The effect of annealing temperature on electrical properties of Au/n-GaSb Schottky contacts

Au film (200nm) is deposited on Te doped n-GaSb grown to form metal/ semiconductor contacts, and these contacts are quickly annealed at 200°C-400°C in the ambient gas of N
₂
. It is found that these contacts show rectifying Schottky behavior by I-V measurement. The characteristic of the contact is improved when annealed under the appropriate temperature. It leaded to increase the barrier height and reduce both the ideality factor and the leakage current.