High quality dry etched InP semiconductor laser facets and characterization using atomic force microscopy

With the use of atomic force microscopy (AFM) we show excellent agreement between theoretical predictions and actual measurements. From this analysis, we have developed a level of confidence in future facet roughness calculations based on data obtained through slope efficiency and far field data. Our rms facet roughness is 220 /spl Aring/, well below the industrial standard. We have also measured the facet vertically to be 2" which, to our knowledge, is the best to date for methane-based InP laser facet etching.