94-GHz 0.1- mu m T-gate low-noise pseudomorphic InGaAs HEMTs

Fabrication of state-of-the-art W-band 0.1- mu m T-gate pseudomorphic (PM) InGaAs high electron mobility transistors (HEMTs) is reported. This device achieved a noise figure of 2.1 dB with an associated gain of 6.3 dB at 93.5 GHz. The device has a maximum gain of 9.6 dB at 94 GHz, which extrapolates to an F/sub max/ of 290 GHz. This noise figure is claimed to be the lowest ever reported for HEMTs fabricated on GaAs substrates at this frequency range.<
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