A simple characterization method for silicon-on-insulator materials using a depletion-mode MOSFET

A simple method is proposed for extracting the electrical parameters of a silicon-on-insulator (SOI) material from a depletion-mode MOSFET. It is based on an analysis of static input current-voltage I/sub D/(V/sub G/) and transconductance-voltage g/sub m/(V/sub G/) characteristics in the linear region. Functions varying linearly with gate voltage are constructed from I/sub D/(V/sub G/) and g/sub m/(V/sub G/) functions. These new functions allow a straightforward determination of the parameters usually obtained from a capacitance-voltage measurement (doping level, oxide charge, etc.) and also the bulk-layer and accumulation-layer carrier mobility.<
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