Pizeoelectric epitaxial sol-gel Pb(Zr0.52Ti0.48)O3 film on Si(001)

Epitaxial Pb(Zr
_0.52
Ti
_0.48
)O
₃
(PZT) thin film has been successfully integrated on Si(001) substrate by sol-gel method. SrTiO
₃
(STO) layer deposited on Si by Molecular Beam Epitaxy (MBE) acts as a template layer in this study to avoid the formation of amorphous SiO
₂
, and allows the chemical compatibility for further epitaxial growth. For bottom electrode, SrRuO
₃
(SRO) layer grown by Pulsed Laser Deposition (PLD) on STO/Si was used. Epitaxial single crystalline growth of PZT film after Rapid Thermal Annealing (RTA) at 650°C was evidenced by X-Ray Diffraction (XRD). The following relationship in the heterostructure was deduced: [110] PZT (001) // [110] SRO (001) // [110] STO (001) // [100] Si (001). A clear piezoelectric response of the film was observed by Piezoresponse Force Microscope (PFM). Moreover, the structural STO quality was proved to have a major impact on the electrical properties of PZT films.