Highly oriented La doped (K, Na)NbO3 ferroelectric thin films

Lead-free (K
_0.5
Na
_0.5
)
_1-3x
La
_x
NbO
₃
(x = 0.0-0.005) thin films were synthesized by chemical solution deposition. The X-ray analysis showed that (K
_0.5
Na
_0.5
)NbO
₃
(KNN) and La doped KNN single-phase thin films were obtained with a [100] preferred orientation. When doping with La, thin films exhibited a remarkably low leakage current and higher dielectric properties.