Silicon TFTs and circuits on glass and on plastics

Silicon technology leading to reliable CMOS electronics on any substrate supporting a maximum temperature of 180°C is presented. The technology is based on as-deposited microcrystalline silicon deposited in standard PECVD reactor using usual silane and hydrogen gases and adding only argon to improve the crystalline fraction. Very high uniformity on the size of our substrate (5cm×5cm) is demonstrated. Reproducibility is obtained even if the flows of the gases are slightly varied. New silicon technology producing circuits that are able to go with any physical function is then demonstrated.