As-deposited crystallized silicon TFTs for active display addressing

N-type microcrystalline silicon TFTs fabricated at low temperature, lower than 200°C, show interesting mobility value of 6 cm
²
/V.s and electrical stability under stress. TFTs used a thin active layer whose the structure consists on nano-sized grains and silicon dioxide as gate insulator. This insulator was deposited by RF sputtering without heating the substrate holder and then annealed at 200°C. These results show the great possibilities of as-deposited crystallized silicon technology to meet all the requirements for high resolution active matrix displays.