A 3-D Table-Based Method for Non-Quasi-Static Microwave FET Devices Modeling

A highly accurate method of building a large-signal modeling approach considering dispersive effect of field-effect transistors is presented in this paper. The non-quasi-static effect of the transistor is described through high-order constitutive nonlinear current sources and charge sources. The extraction and building of these sources are executed by polynomial regression, which is fast and determined by unique values. The sources are built by 3-D tables, where the added dimension is a variable integration path used to account for the dispersion effect. The performance up to the millimeter-wave frequency of the model is satisfied. The validity of the proposed technology-independent approach has been verified by both GaAs and GaN devices.