High-Voltage and RF Performance of SOI MESFET Using Controlled Electric Field Distribution

A novel silicon-on-insulator metal-semiconductor field-effect transistor (SOI MESFET) with controlled electric field distribution is presented in this brief. An additional layer of oxide (LO) is located in the device channel region in order to supervise the electric field distribution. The simulation results show that the LO region has excellent effects on the breakdown voltage of the device, which increases by 50% compared with that of the conventional SOI MESFET structure. Also, the maximum output power density improves by 53%. In addition, the LO region causes the improvement of the device gains and frequency parameters. Consequently, the novel SOI MESFET structure has superior electrical characteristics compared with the similar device based on the conventional structure.