Multiple coupling inductors model based on four-port measurement

This paper analyzes the coupling effects among four on-chip spiral inductors and develops a multiple coupling inductors model based on four-port S-parameters up to 50 GHz. Each single inductor model is directly extracted from measurements based on a one-port extraction algorithm, as well as the mutual coupling elements among inductors. The modeled results agree well with the measured results up to self-resonance frequency. Test structures are fabricated using a commercial 0.18µm RFCMOS process.