State of the Art 200 GHz power measurements on SiGe:C HBT using an innovative load pull measurement setup

In this paper we report for the first time power measurements on a single ended heterojunction bipolar transistor at 200 GHz with a variation of load impedance by means of an integrated tuner. These power measurements are done on a SiGe HBT from a BiCMOS technology featuring 220/280 GHz F
T
/F
MAX
, from STMicroelectronics. Integrated impedance tuners are specially designed in order to characterize the device for various load impedance. After ensuring the linearity of the integrated tuner, SiGe HBT is characterized in non linear operation in order to extract the common characteristics such as transducer gain, output power and power available efficiency at 200 GHz. Up to now, only measurements on integrated circuit such as amplifiers have been reported in this frequency range. This is the first report of a non linear measurement on a single ended device at this frequency thanks to the integrated tuner.