Role of screening, heating, and dielectrics on high-field transport in graphene

Graphene is an interesting material for electronic applications due to its high intrinsic mobility at low-field. However, high-field transport in graphene is less well understood, with the simple assumption often made that it is limited by substrate optical phonon (SO) scattering. Here we model high-field transport in graphene on several dielectric substrates including SO and graphene phonons, proper charge screening, impurity scattering, and self-heating effects. Our model is carefully calibrated against existing experimental data for graphene on SiO
2
[1] at several ambient temperatures and different carrier densities. We then use it to investigate transport in graphene on other dielectrics where experiments do not exist yet.