Abstract:
This paper reports 400-GHz ƒmax using a tall-stem T-gate on an N-polar GaN/InAlN MIS-HEMT grown by MOCVD. This is the highest reported ƒmax value to date for an N-polar G...Show MoreMetadata
Abstract:
This paper reports 400-GHz ƒmax using a tall-stem T-gate on an N-polar GaN/InAlN MIS-HEMT grown by MOCVD. This is the highest reported ƒmax value to date for an N-polar GaN HEMT and is among the highest values for all GaN HEMTs.
Published in: 70th Device Research Conference
Date of Conference: 18-20 June 2012
Date Added to IEEE Xplore: 02 August 2012
ISBN Information:
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