Graphene Epitaxial growth on SiC(0001) for resistance standards

Epitaxial growth of graphene layers on 6H-SiC(0001) substrates are studied to improve the performance of graphene for metrological applications. A face-to-face (FTF) annealing method at 2000 °C in an Ar background atmosphere are used to inhibit the rates of SiC decomposition and Si sublimation and thus control the graphene layer development. Sample surface morphology and its relation to changes in the growth conditions are described.