Design, fabrication, and calibration of stress sensors embedded in a TSV interposer in a 300mm wafer

In this study, the design, fabrication, and calibration of the piezoresistive stress sensors [1-18] embedded in a TSV (through silicon via) interposer in a 300mm wafer are investigated. The results presented herein should be useful for the development of 3D integration such as measuring the strength of the TSV device and interposer wafers, during and after all the processes such as wafer thinning, SiO
₂
deposition, metallization, and electroplating.